The infrared vibrational absorption spectrum of the Si-X defect present in heavily Si doped GaAs

Subjects

Subjects :

Gallium arsenide -- Analysis
Silicon -- Spectra
Vibrational spectra -- Research
Physics

Details

ISSN :

00218979

Volume :

82

Issue :

1

Database :

Gale General OneFile

Journal :

Journal of Applied Physics

Publication Type :

Academic Journal

Accession number :

edsgcl.19699434