The infrared vibrational absorption spectrum of the Si-X defect present in heavily Si doped GaAs

MLA

Ashwin, M. J., et al. “The Infrared Vibrational Absorption Spectrum of the Si-X Defect Present in Heavily Si Doped GaAs.” Journal of Applied Physics, vol. 82, no. 1, July 1997, p. 137. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.19699434&authtype=sso&custid=ns315887.

APA

Ashwin, M. J., Newman, R. C., & Muraki, K. (1997). The infrared vibrational absorption spectrum of the Si-X defect present in heavily Si doped GaAs. Journal of Applied Physics, 82(1), 137.

Chicago

Ashwin, M.J., R.C. Newman, and K. Muraki. 1997. “The Infrared Vibrational Absorption Spectrum of the Si-X Defect Present in Heavily Si Doped GaAs.” Journal of Applied Physics 82 (1): 137. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.19699434&authtype=sso&custid=ns315887.