Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress

The primary hot holes of the n+/p emitter tunneling current bring about degradation of the common-emitter forward current gain, h(sub F E), of the submicron silicon bipolar transistor at a low reverse emitter base junction applied voltage. The tunnel- and substrate-injected hot electrons initiate the generation of silicon/oxide interface traps, which show identical kinetic dependence. Stress voltages less than 2.4V show degradation of h(sub F E).