Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress

MLA

Neugroschel, Arnost, et al. “Degradation of Bipolar Transistor Current Gain by Hot Holes during Reverse Emitter-Base Bias Stress.” IEEE Transactions on Electron Devices, vol. 43, no. 8, Aug. 1996, p. 1286. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.18881617&authtype=sso&custid=ns315887.

APA

Neugroschel, A., Sah, C.-T., & Carroll, M. S. (1996). Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress. IEEE Transactions on Electron Devices, 43(8), 1286.

Chicago

Neugroschel, Arnost, Chih-Tang Sah, and Michael S. Carroll. 1996. “Degradation of Bipolar Transistor Current Gain by Hot Holes during Reverse Emitter-Base Bias Stress.” IEEE Transactions on Electron Devices 43 (8): 1286. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.18881617&authtype=sso&custid=ns315887.