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Impact ionization coefficients in 4H-SiC
- Source :
- IEEE Transactions on Electron Devices. August, 2008, Vol. 55 Issue 8, p1984, 7 p.
- Publication Year :
- 2008
-
Abstract
- Hole and mixed multiplication characteristics are obtained on thick 4H-SiC avalanche photodiodes (APDs) with nominal avalanche widths between 2.7 and 6 [micro]m. Ionization coefficients are parameterized over the electric field range from 0.9 to 5 MV/cm, which have helped in the accurate prediction of the multiplication and breakdown characteristics of 4H-SiC.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 8
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.184773056