Impact ionization coefficients in 4H-SiC

MLA

Loh, W. S., et al. “Impact Ionization Coefficients in 4H-SiC.” IEEE Transactions on Electron Devices, vol. 55, no. 8, Aug. 2008, p. 1984. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.184773056&authtype=sso&custid=ns315887.

APA

Loh, W. S., Ng, B. K., Ng, J. S., Soloviev, S. I., Ho-Young Cha, Sandvik, P. M., Johnson, C. M., & David, J. P. R. (2008). Impact ionization coefficients in 4H-SiC. IEEE Transactions on Electron Devices, 55(8), 1984.

Chicago

Loh, W.S., B.K. Ng, J.S. Ng, Stanislas I. Soloviev, Ho-Young Cha, Peter M. Sandvik, C. Mark Johnson, and John P.R. David. 2008. “Impact Ionization Coefficients in 4H-SiC.” IEEE Transactions on Electron Devices 55 (8): 1984. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.184773056&authtype=sso&custid=ns315887.