Transmission electron microscopy and reflected high-energy electron-diffraction investigation of plastic relaxation in doped and undoped ZnSe/GaAs(001)

Authors :: Rosenauer, A.
Reisinger, T.
Franzen, F.
Schutz, G.
Hahn, B.
Wolf, K.
Zweck, J.
Gebhardt, W.
Source :: Journal of Applied Physics. April 15, 1996, Vol. 79 Issue 8, p4124, 8 p.
Publication Year :: 1996

Subjects :: Semiconductors -- Evaluation
Stress relaxation (Materials) -- Analysis
Dislocations in crystals -- Analysis
Crystals -- Structure
Physics

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