Transmission electron microscopy and reflected high-energy electron-diffraction investigation of plastic relaxation in doped and undoped ZnSe/GaAs(001)

MLA

Rosenauer, A., et al. “Transmission Electron Microscopy and Reflected High-Energy Electron-Diffraction Investigation of Plastic Relaxation in Doped and Undoped ZnSe/GaAs(001).” Journal of Applied Physics, vol. 79, no. 8, Apr. 1996, p. 4124. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.18393273&authtype=sso&custid=ns315887.

APA

Rosenauer, A., Reisinger, T., Franzen, F., Schutz, G., Hahn, B., Wolf, K., Zweck, J., & Gebhardt, W. (1996). Transmission electron microscopy and reflected high-energy electron-diffraction investigation of plastic relaxation in doped and undoped ZnSe/GaAs(001). Journal of Applied Physics, 79(8), 4124.

Chicago

Rosenauer, A., T. Reisinger, F. Franzen, G. Schutz, B. Hahn, K. Wolf, J. Zweck, and W. Gebhardt. 1996. “Transmission Electron Microscopy and Reflected High-Energy Electron-Diffraction Investigation of Plastic Relaxation in Doped and Undoped ZnSe/GaAs(001).” Journal of Applied Physics 79 (8): 4124. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.18393273&authtype=sso&custid=ns315887.