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Analytical electron-mobility model for arbitrarily stressed silicon
- Source :
- IEEE Transactions on Electron Devices. June, 2008, Vol. 55 Issue 6, p1386, 5 p.
- Publication Year :
- 2008
-
Abstract
- An analytical electron-mobility model for arbitrarily strained silicon is presented. Findings reveal that the proposed model has a 1.2 percent maximum relative error of energy along [110] for unstrained conduction band.
- Subjects :
- Electron mobility -- Models
Electron mobility -- Analysis
Silicon -- Electric properties
Silicon -- Mechanical properties
Strains and stresses -- Analysis
Stress relaxation (Materials) -- Analysis
Stress relieving (Materials) -- Analysis
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.181169543