Analytical electron-mobility model for arbitrarily stressed silicon

MLA

Yaohua Tan, et al. “Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon.” IEEE Transactions on Electron Devices, vol. 55, no. 6, June 2008, p. 1386. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.181169543&authtype=sso&custid=ns315887.

APA

Yaohua Tan, Xiaojian Li, Lilin Tian, & Zhiping Yu. (2008). Analytical electron-mobility model for arbitrarily stressed silicon. IEEE Transactions on Electron Devices, 55(6), 1386.

Chicago

Yaohua Tan, Xiaojian Li, Lilin Tian, and Zhiping Yu. 2008. “Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon.” IEEE Transactions on Electron Devices 55 (6): 1386. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.181169543&authtype=sso&custid=ns315887.