Electrical and structural properties of rapid thermally annealed boron-doped silicon films deposited by plasma-enhanced chemical-vapor deposition

Analysis of the electrical, structural and piezoresistive properties of plasma-enhanced chemical vapor-deposited (PECVD) thin silicon layers with in situ boron doping and undergoing rapid thermal annealing shows that the silicon films have good electrical and transport properties and are suitable for providing SOI substrates for thin-film sensor devices. The electrical properties of the PECVD silicon films are better than those of low-pressure chemical-vapor deposited films. The low temperature coefficient of resistance for various dopant levels in the PECVD polysilicon films further support the good transport properties of the films.