Electrical and structural properties of rapid thermally annealed boron-doped silicon films deposited by plasma-enhanced chemical-vapor deposition

MLA

Jeanjean, P., et al. “Electrical and Structural Properties of Rapid Thermally Annealed Boron-Doped Silicon Films Deposited by Plasma-Enhanced Chemical-Vapor Deposition.” Journal of Applied Physics, vol. 76, no. 8, Oct. 1994, p. 4682. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.16534214&authtype=sso&custid=ns315887.

APA

Jeanjean, P., Sicart, J., Sellitto, P., Robert, J. L., Bustarret, E., Grieshaber, W., Cali, J., Berre, M. L., Lemiti, M., Pinard, P., & Conedera, V. (1994). Electrical and structural properties of rapid thermally annealed boron-doped silicon films deposited by plasma-enhanced chemical-vapor deposition. Journal of Applied Physics, 76(8), 4682.

Chicago

Jeanjean, P., J. Sicart, P. Sellitto, J.L. Robert, E. Bustarret, W. Grieshaber, J. Cali, et al. 1994. “Electrical and Structural Properties of Rapid Thermally Annealed Boron-Doped Silicon Films Deposited by Plasma-Enhanced Chemical-Vapor Deposition.” Journal of Applied Physics 76 (8): 4682. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.16534214&authtype=sso&custid=ns315887.