Annealing-temperature dependence: Mechanism of Hf silicidation in HfO(sub 2) gate insulators on Si by core-level photoemission spectroscopy

A study was conducted to investigate the mechanism of Hf silicidation from HfO(sub 2) gate insulators on Si by high-resolution core-level photoemmision spectroscopy temperature with detailed anneling-temperature controlling. The results showed that the silicidation temperature depends on the difference of the chemical states at the interfacial layer.