Annealing-temperature dependence: Mechanism of Hf silicidation in HfO(sub 2) gate insulators on Si by core-level photoemission spectroscopy

MLA

Toyoda, S., et al. “Annealing-Temperature Dependence: Mechanism of Hf Silicidation in HfO(Sub 2) Gate Insulators on Si by Core-Level Photoemission Spectroscopy.” Journal of Applied Physics, vol. 99, no. 1, Jan. 2006, p. 014901. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.145665502&authtype=sso&custid=ns315887.

APA

Toyoda, S., Niwa, M., Okabayashi, J., Usuda, K., Takahashi, H., G.L. Liu, Kumigashira, H., & Oshima, M. (2006). Annealing-temperature dependence: Mechanism of Hf silicidation in HfO(sub 2) gate insulators on Si by core-level photoemission spectroscopy. Journal of Applied Physics, 99(1), 014901.

Chicago

Toyoda, S., M. Niwa, J. Okabayashi, K. Usuda, H. Takahashi, G.L. Liu, H. Kumigashira, and M. Oshima. 2006. “Annealing-Temperature Dependence: Mechanism of Hf Silicidation in HfO(Sub 2) Gate Insulators on Si by Core-Level Photoemission Spectroscopy.” Journal of Applied Physics 99 (1): 014901. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.145665502&authtype=sso&custid=ns315887.