Defects in low-temperature electron-irradiated p-type silicon

The nature and behavior of defects in low-temperature electron-irradiated p-type silicon were investigated using deep-level transient spectroscopy. The results showed that defects which were created after irradiation at 90 and 200 K were different from those observed at 4, 77 and 300 K. This indicated that the presence of two annealing stages between 90 and 200 K and 200 and 300 K. The behavior of electron-induced defects in Si was found to be more complicated than previously thought.