Defects in low-temperature electron-irradiated p-type silicon

MLA

Nubile, P., et al. “Defects in Low-Temperature Electron-Irradiated p-Type Silicon.” Journal of Applied Physics, vol. 72, no. 7, Oct. 1992, p. 2673. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.14280154&authtype=sso&custid=ns315887.

APA

Nubile, P., Bourgoin, J. C., Stievenard, D., Deresmes, D., & Strobl, G. (1992). Defects in low-temperature electron-irradiated p-type silicon. Journal of Applied Physics, 72(7), 2673.

Chicago

Nubile, P., J.C. Bourgoin, D. Stievenard, D. Deresmes, and G. Strobl. 1992. “Defects in Low-Temperature Electron-Irradiated p-Type Silicon.” Journal of Applied Physics 72 (7): 2673. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.14280154&authtype=sso&custid=ns315887.