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A study of residual stress distribution through the thickness of p+ silicon films
- Source :
- IEEE Transactions on Electron Devices. July, 1993, Vol. 40 Issue 7, p1245, 6 p.
- Publication Year :
- 1993
-
Abstract
- The effects of thermal oxidation on residual stress distribution through the thickness of a p+ silicon wafer doped with boron are studied. A positive curvature or negative binding moment is exhibited by as diffused p+ silicon with a residual stress without being influenced by thermal oxidation. The residual stress distribution can be changed by thermal oxidation in the surface regions of p+ silicon film.
Details
- ISSN :
- 00189383
- Volume :
- 40
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.14169333