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Positive temperature coefficient of impact ionization in strained-Si

Authors :
Waldron, Niamh S.
Pitera, Arthur J.
Lee, Minjoo L.
Fitzgerald, Eugene A.
del Alamo, Jesus A.
Source :
IEEE Transactions on Electron Devices. July, 2005, Vol. 52 Issue 7, p1627, 7 p.
Publication Year :
2005

Abstract

Impact ionization (II) in the strained Si layer of a strained-Si/SiGe heterostructure is studied. The finding states that the impact ionization multiplication coefficient has a positive temperature coefficient, which is opposite to that of bulk Si.

Subjects

Subjects :
Semiconductor wafers -- Electric properties
Semiconductor doping -- Research
Ionization -- Analysis
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
52
Issue :
7
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.134812181

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