Positive temperature coefficient of impact ionization in strained-Si

MLA

Waldron, Niamh S., et al. “Positive Temperature Coefficient of Impact Ionization in Strained-Si.” IEEE Transactions on Electron Devices, vol. 52, no. 7, July 2005, p. 1627. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.134812181&authtype=sso&custid=ns315887.

APA

Waldron, N. S., Pitera, A. J., Lee, M. L., Fitzgerald, E. A., & del Alamo, J. A. (2005). Positive temperature coefficient of impact ionization in strained-Si. IEEE Transactions on Electron Devices, 52(7), 1627.

Chicago

Waldron, Niamh S., Arthur J. Pitera, Minjoo L. Lee, Eugene A. Fitzgerald, and Jesus A. del Alamo. 2005. “Positive Temperature Coefficient of Impact Ionization in Strained-Si.” IEEE Transactions on Electron Devices 52 (7): 1627. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.134812181&authtype=sso&custid=ns315887.