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Metal gate work function engineering on gate leakage of MOSFETs

Authors :
Yong-Tian Hou
Ming-Fu Li
Low, Tony
Dim-Lee Kwong
Source :
IEEE Transactions on Electron Devices. Nov, 2004, Vol. 51 Issue 11, p1783, 7 p.
Publication Year :
2004

Abstract

A systematic study of tunneling leakage current in metal gate MOSFETs and how it is affected by the work function of the metal gate electrodes is presented. The results show good agreements with measurements for both SiO2 and HfO2 gate dielectrics with TaN electrodes.

Subjects

Subjects :
Annealing -- Methods
Electric currents, Vagrant -- Analysis
Metal oxide semiconductor field effect transistors -- Evaluation
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
51
Issue :
11
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.125290700

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