Cite
Metal gate work function engineering on gate leakage of MOSFETs
MLA
Yong-Tian Hou, et al. “Metal Gate Work Function Engineering on Gate Leakage of MOSFETs.” IEEE Transactions on Electron Devices, vol. 51, no. 11, Nov. 2004, p. 1783. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.125290700&authtype=sso&custid=ns315887.
APA
Yong-Tian Hou, Ming-Fu Li, Low, T., & Dim-Lee Kwong. (2004). Metal gate work function engineering on gate leakage of MOSFETs. IEEE Transactions on Electron Devices, 51(11), 1783.
Chicago
Yong-Tian Hou, Ming-Fu Li, Tony Low, and Dim-Lee Kwong. 2004. “Metal Gate Work Function Engineering on Gate Leakage of MOSFETs.” IEEE Transactions on Electron Devices 51 (11): 1783. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.125290700&authtype=sso&custid=ns315887.