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Physical characterization of amorphous In-Ga-Zn-O thin-film transistors with direct-contact asymmetric graphene electrode

Authors :
Jaewook Jeong
Joonwoo Kim
Hee-Yeon Noh
Soon Moon Jeong
Jung-Hye Kim
Sung Myung
Source :
AIP Advances, Vol 4, Iss 9, Pp 097111-097111-6 (2014)
Publication Year :
2014
Publisher :
AIP Publishing LLC, 2014.

Abstract

High performance a-IGZO thin-film transistors (TFTs) are fabricated using an asymmetric graphene drain electrode structure. A-IGZO TFTs (channel length = 3 μm) were successfully demonstrated with a saturation field-effect mobility of 6.6 cm2/Vs without additional processes between the graphene and a-IGZO layer. The graphene/a-IGZO junction exhibits Schottky characteristics and the contact property is affected not only by the Schottky barrier but also by the parasitic resistance from the depletion region under the graphene electrode. Therefore, to utilize the graphene layer as S/D electrodes for a-IGZO TFTs, an asymmetric electrode is essential, which can be easily applied to the conventional pixel electrode structure.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
21583226
Volume :
4
Issue :
9
Database :
Directory of Open Access Journals
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.75fbbc1af5b54bc88fefa6288da9dc51
Document Type :
article
Full Text :
https://doi.org/10.1063/1.4895385