Cite

Physical characterization of amorphous In-Ga-Zn-O thin-film transistors with direct-contact asymmetric graphene electrode

MLA

Jaewook Jeong, et al. “Physical Characterization of Amorphous In-Ga-Zn-O Thin-Film Transistors with Direct-Contact Asymmetric Graphene Electrode.” AIP Advances, vol. 4, no. 9, Sept. 2014. EBSCOhost, https://doi.org/10.1063/1.4895385.



APA

Jaewook Jeong, Joonwoo Kim, Hee-Yeon Noh, Soon Moon Jeong, Jung-Hye Kim, & Sung Myung. (2014). Physical characterization of amorphous In-Ga-Zn-O thin-film transistors with direct-contact asymmetric graphene electrode. AIP Advances, 4(9). https://doi.org/10.1063/1.4895385



Chicago

Jaewook Jeong, Joonwoo Kim, Hee-Yeon Noh, Soon Moon Jeong, Jung-Hye Kim, and Sung Myung. 2014. “Physical Characterization of Amorphous In-Ga-Zn-O Thin-Film Transistors with Direct-Contact Asymmetric Graphene Electrode.” AIP Advances 4 (9). doi:10.1063/1.4895385.