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Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration
- Source :
- Nanomaterials, Vol 12, Iss 7, p 1218 (2022)
- Publication Year :
- 2022
- Publisher :
- MDPI AG, 2022.
-
Abstract
- In this work, low-temperature Schottky source/drain (S/D) MOSFETs are investigated as the top-tier devices for 3D sequential integration. Complementary Schottky S/D FinFETs are successfully fabricated with a maximum processing temperature of 500 °C. Through source/drain extension (SDE) engineering, competitive driving capability and switching properties are achieved in comparison to the conventional devices fabricated with a standard high-temperature (≥1000 °C) process flow. Schottky S/D PMOS exhibits an ON-state current (ION) of 76.07 μA/μm and ON-state to OFF-state current ratio (ION/IOFF) of 7 × 105, and those for NMOS are 48.57 μA/μm and 1 × 106. The CMOS inverter shows a voltage gain of 18V/V, a noise margin for high (NMH) of 0.17 V and for low (NML) of 0.43 V, with power consumption less than 0.9 μW at VDD of 0.8 V. Full functionality of CMOS ring oscillators (RO) are further demonstrated.
Details
- Language :
- English
- ISSN :
- 12071218 and 20794991
- Volume :
- 12
- Issue :
- 7
- Database :
- Directory of Open Access Journals
- Journal :
- Nanomaterials
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.718ad3c0a2d44cbcb194c795c597a267
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/nano12071218