Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration

MLA

Shujuan Mao, et al. “Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration.” Nanomaterials, vol. 12, no. 7, Apr. 2022, p. 1218. EBSCOhost, https://doi.org/10.3390/nano12071218.

APA

Shujuan Mao, Jianfeng Gao, Xiaobin He, Weibing Liu, Jinbiao Liu, Guilei Wang, Na Zhou, Yanna Luo, Lei Cao, Ran Zhang, Haochen Liu, Xun Li, Yongliang Li, Zhenhua Wu, Junfeng Li, Jun Luo, Chao Zhao, Wenwu Wang, & Huaxiang Yin. (2022). Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration. Nanomaterials, 12(7), 1218. https://doi.org/10.3390/nano12071218

Chicago

Shujuan Mao, Jianfeng Gao, Xiaobin He, Weibing Liu, Jinbiao Liu, Guilei Wang, Na Zhou, et al. 2022. “Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration.” Nanomaterials 12 (7): 1218. doi:10.3390/nano12071218.