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Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer

Authors :
Yu-Hua Liu
Chyuan-Haur Kao
Tsung-Chin Cheng
Chih-I Wu
Jer-Chyi Wang
Source :
Nanomaterials, Vol 7, Iss 11, p 385 (2017)
Publication Year :
2017
Publisher :
MDPI AG, 2017.

Abstract

Gold-nanoparticle (Au-NP) non-volatile memories (NVMs) with low-damage CF4 plasma treatment on the blocking oxide (BO) layer have been investigated to present the gate injection of the holes. These holes, injected from the Al gate with the positive gate bias, were explained by the bandgap engineering of the gradually-fluorinated BO layer and the effective work function modulation of the Al gate. The Si–F complex in the BO layer was analyzed by X-ray photoelectron spectroscopy (XPS), while the depth of fluorine incorporation was verified using a secondary ion mass spectrometer (SIMS). In addition, the valence band modification of the fluorinated BO layer was examined by ultraviolet photoelectron spectroscopy (UPS) to support the bandgap engineering. The reactive power of the CF4 plasma treatment on the BO layer was modified to increase the electric field of the BO layer and raise the effective work function of the Al gate, leading to the hole-injection from the gate. The injected holes are trapped at the interface between the gold-nanoparticles (Au-NPs) and the tunneling oxide (TO) layer, resulting in superior data retention properties such as an extremely low charge loss of 5.7% at 104 s and a nearly negligible increase in charge loss at 85 °C of the CF4-plasma-treated Au-NP NVMs, which can be applied in highly reliable consumer electronics.

Details

Language :
English
ISSN :
20794991
Volume :
7
Issue :
11
Database :
Directory of Open Access Journals
Journal :
Nanomaterials
Publication Type :
Academic Journal
Accession number :
edsdoj.49a9934c2de742a29945c0b9eaea912e
Document Type :
article
Full Text :
https://doi.org/10.3390/nano7110385