Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer

MLA

Yu-Hua Liu, et al. “Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer.” Nanomaterials, vol. 7, no. 11, Nov. 2017, p. 385. EBSCOhost, https://doi.org/10.3390/nano7110385.

APA

Yu-Hua Liu, Chyuan-Haur Kao, Tsung-Chin Cheng, Chih-I Wu, & Jer-Chyi Wang. (2017). Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer. Nanomaterials, 7(11), 385. https://doi.org/10.3390/nano7110385

Chicago

Yu-Hua Liu, Chyuan-Haur Kao, Tsung-Chin Cheng, Chih-I Wu, and Jer-Chyi Wang. 2017. “Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer.” Nanomaterials 7 (11): 385. doi:10.3390/nano7110385.