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InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening
- Source :
- JOURNAL OF APPLIED PHYSICS
- Publication Year :
- 2014
-
Abstract
- Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadening issue can prevent a microcavity (MC) system entering into the strong light-matter coupling regime (SCR). The impact of excitonic disorder in low indium content (x similar to 0.1) InxGa1-xN/GaN MQW active regions is therefore investigated for the subsequent realization of polariton laser diodes by considering both simulations and optical characterizations. It allows deriving the requirements for such MQWs in terms of absorption, emission linewidth, and Stokes shift. Systematic absorption-like and photoluminescence (PL) spectroscopy experiments are performed on single and multiple In0.1Ga0.9N/GaN quantum wells (QWs). Micro-PL mappings reveal a low temperature PL linewidth of similar to 30 meV, compatible with SCR requirements, for single QWs for which the microscopic origin responsible for this broadening is qualitatively discussed. When stacking several InGaN/GaN QWs, a departure from such a narrow linewidth value and an increase in the Stokes shift are observed. Various possible reasons for this degradation such as inhomogeneous built-in field distribution among the QWs are then identified. An alternative solution for the MC design to achieve the SCR with the InGaN alloy is briefly discussed. (C) 2014 AIP Publishing LLC.
- Subjects :
- Materials science
Photoluminescence
Condensed matter physics
business.industry
Exciton
General Physics and Astronomy
Heterojunction
02 engineering and technology
021001 nanoscience & nanotechnology
Laser
01 natural sciences
law.invention
symbols.namesake
Laser linewidth
law
Stokes shift
0103 physical sciences
symbols
Polariton
Optoelectronics
010306 general physics
0210 nano-technology
business
Quantum well
Subjects
Details
- Volume :
- 115
- Issue :
- 23
- Database :
- OpenAIRE
- Journal :
- JOURNAL OF APPLIED PHYSICS
- Accession number :
- edsair.doi.dedup.....a1b8d69a1c8d67bf557d1469760eca4d
- Full Text :
- https://doi.org/10.1063/1.4883958