Cite
InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening
MLA
Raphaël Butté, et al. “InGaN/GaN Quantum Wells for Polariton Laser Diodes: Role of Inhomogeneous Broadening.” JOURNAL OF APPLIED PHYSICS, vol. 115, no. 23, Jan. 2014, pp. 233511–2335115. EBSCOhost, https://doi.org/10.1063/1.4883958.
APA
Raphaël Butté, Marlene Glauser, Nicolas Grandjean, Christian Mounir, Georg Rossbach, Jean-François Carlin, & Eric Feltin. (2014). InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening. JOURNAL OF APPLIED PHYSICS, 115(23), 233511–2335115. https://doi.org/10.1063/1.4883958
Chicago
Raphaël Butté, Marlene Glauser, Nicolas Grandjean, Christian Mounir, Georg Rossbach, Jean-François Carlin, and Eric Feltin. 2014. “InGaN/GaN Quantum Wells for Polariton Laser Diodes: Role of Inhomogeneous Broadening.” JOURNAL OF APPLIED PHYSICS 115 (23): 233511–115. doi:10.1063/1.4883958.