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Low-Frequency Noise Behavior of nMOSFETs with Different Al2O3 Capping Layer Thickness and TiN Gate
- Publication Year :
- 2019
- Publisher :
- ICLAB, 2019.
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....47c1c3bcf03921a58c3152dc17b6889e
- Full Text :
- https://doi.org/10.5075/epfl-iclab-icnf-269189