Cite
Low-Frequency Noise Behavior of nMOSFETs with Different Al2O3 Capping Layer Thickness and TiN Gate
MLA
Wang, Danghui, et al. Low-Frequency Noise Behavior of NMOSFETs with Different Al2O3 Capping Layer Thickness and TiN Gate. Jan. 2019. EBSCOhost, https://doi.org/10.5075/epfl-iclab-icnf-269189.
APA
Wang, D., Simoen, E., Claeys, C., Govoreanu, B., Kubicek, S., Jussot, J., Chan, B. T., Dumoulin-Stuyck, N., Radu, I., & Mocuta, D. (2019). Low-Frequency Noise Behavior of nMOSFETs with Different Al2O3 Capping Layer Thickness and TiN Gate. https://doi.org/10.5075/epfl-iclab-icnf-269189
Chicago
Wang, Danghui, Eddy Simoen, Cor Claeys, Bogdan Govoreanu, Stefan Kubicek, Julien Jussot, B.T. Chan, Nard Dumoulin-Stuyck, Iuliana Radu, and Dan Mocuta. 2019. “Low-Frequency Noise Behavior of NMOSFETs with Different Al2O3 Capping Layer Thickness and TiN Gate,” January. doi:10.5075/epfl-iclab-icnf-269189.