Nd-YAG laser annealing of arsenic-implanted silicon - dependence upon scanning speed and power density

The annealing behavior of arsenic‐implanted silicon using Nd:YAG laser irradiation was investigated. The annealing process depended upon the scanning speed and the power density. The carrier concentration at the surface was higher by factor of approx. 1.5 to 3 than in the bulk. Multiple irradiation resulted in a profile broadening and a reduced carrier concentration in the bulk. The dependence of the electron mobility upon the electron concentration up to 1.5×1021 cm−3 was measured. The experimental results show that the electron mobility depends only on the electron concentration, and is independent of the conditions of annealing.