Cite
Nd-YAG laser annealing of arsenic-implanted silicon - dependence upon scanning speed and power density
MLA
H. Ryssel, et al. Nd-YAG Laser Annealing of Arsenic-Implanted Silicon - Dependence upon Scanning Speed and Power Density. Jan. 1981. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....084a941d96579d43ff861e7168343750&authtype=sso&custid=ns315887.
APA
H. Ryssel, D. Röschenthaler, P. H. Tsien, & I. Ruge. (1981). Nd-YAG laser annealing of arsenic-implanted silicon - dependence upon scanning speed and power density.
Chicago
H. Ryssel, D. Röschenthaler, P. H. Tsien, and I. Ruge. 1981. “Nd-YAG Laser Annealing of Arsenic-Implanted Silicon - Dependence upon Scanning Speed and Power Density,” January. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....084a941d96579d43ff861e7168343750&authtype=sso&custid=ns315887.