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Design and construction of a DAB using SiC MOSFETs with an isolation of 24 kV for PET applications
- Source :
- Scopus
- Publication Year :
- 2017
- Publisher :
- IEEE, 2017.
-
Abstract
- European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) (19th, 2007, Warsaw, Poland)<br />This work was supported by the European Commission FP7 Large Project under grant UE-14-SPEED- 604057 and by the Spanish Government under projects DPI2014-56358-JIN and the grant FPI BES- 2014-070785.
- Subjects :
- Engineering
business.industry
020209 energy
020208 electrical & electronic engineering
Electrical engineering
02 engineering and technology
Modular design
law.invention
Inductance
chemistry.chemical_compound
chemistry
law
Electromagnetic coil
Power electronics
MOSFET
0202 electrical engineering, electronic engineering, information engineering
Electronic engineering
Silicon carbide
business
Transformer
Galvanic isolation
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
- Accession number :
- edsair.doi.dedup.....0329e034a4cac7b3e7caf0cf69cfeea8