Cite
Design and construction of a DAB using SiC MOSFETs with an isolation of 24 kV for PET applications
MLA
Mario Lopez, et al. “Design and Construction of a DAB Using SiC MOSFETs with an Isolation of 24 KV for PET Applications.” 2017 19th European Conference on Power Electronics and Applications (EPE’17 ECCE Europe), Sept. 2017. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....0329e034a4cac7b3e7caf0cf69cfeea8&authtype=sso&custid=ns315887.
APA
Mario Lopez, Maria R. Rogina, Alberto Rodriguez, Mariam Saeed, Manuel Arias, & Fernando Briz. (2017). Design and construction of a DAB using SiC MOSFETs with an isolation of 24 kV for PET applications. 2017 19th European Conference on Power Electronics and Applications (EPE’17 ECCE Europe).
Chicago
Mario Lopez, Maria R. Rogina, Alberto Rodriguez, Mariam Saeed, Manuel Arias, and Fernando Briz. 2017. “Design and Construction of a DAB Using SiC MOSFETs with an Isolation of 24 KV for PET Applications.” 2017 19th European Conference on Power Electronics and Applications (EPE’17 ECCE Europe), September. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....0329e034a4cac7b3e7caf0cf69cfeea8&authtype=sso&custid=ns315887.