Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors

Authors :: Liang Huinan
Cheng Wanxi
Feiyu Li
Gao Jun
Pengcheng Tao
Yanhong Liu
Zhonghao Sun
Nan Sun
Hongzhou Wang
Wang Ronghua
Shaoquan Li
Ren Yongshuo
Song Shukuan
Huolin Huang
Source :: Journal of Physics D: Applied Physics. 54:025109
Publication Year :: 2020
Publisher :: IOP Publishing, 2020.

Subjects :: Materials science
Acoustics and Ultrasonics
business.industry
Interface (computing)
Optoelectronics
Field-effect transistor
High-electron-mobility transistor
Nitride
Condensed Matter Physics
business
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Power (physics)

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