Cite
Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors
MLA
Liang Huinan, et al. “Effects of SiON/III-Nitride Interface Properties on Device Performances of GaN-Based Power Field-Effect Transistors.” Journal of Physics D: Applied Physics, vol. 54, Oct. 2020, p. 025109. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........f9ab6eb79449fb92cc6b37b57bdc3115&authtype=sso&custid=ns315887.
APA
Liang Huinan, Cheng Wanxi, Feiyu Li, Gao Jun, Pengcheng Tao, Yanhong Liu, Zhonghao Sun, Nan Sun, Hongzhou Wang, Wang Ronghua, Shaoquan Li, Ren Yongshuo, Song Shukuan, & Huolin Huang. (2020). Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors. Journal of Physics D: Applied Physics, 54, 025109.
Chicago
Liang Huinan, Cheng Wanxi, Feiyu Li, Gao Jun, Pengcheng Tao, Yanhong Liu, Zhonghao Sun, et al. 2020. “Effects of SiON/III-Nitride Interface Properties on Device Performances of GaN-Based Power Field-Effect Transistors.” Journal of Physics D: Applied Physics 54 (October): 025109. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........f9ab6eb79449fb92cc6b37b57bdc3115&authtype=sso&custid=ns315887.