Single-Crystalline (100) Ge Stripes with High Mobilities Formed on Insulating Substrates by Rapid-Melting-Growth with Artificial Single-Crystal Si Seeds

Authors :: Takashi Sakane
Masashi Kurosawa
Kiyoshi Toko
Masanobu Miyao
Taizoh Sadoh
Hiroyuki Yokoyama
Source :: Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Publication Year :: 2010
Publisher :: The Japan Society of Applied Physics, 2010.

Subjects :: Materials science
Chemical engineering
Nanotechnology
Single crystal

Database :: OpenAIRE
Journal :: Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........ecf3e80f877cd322405573be874664dd

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