Cite
Single-Crystalline (100) Ge Stripes with High Mobilities Formed on Insulating Substrates by Rapid-Melting-Growth with Artificial Single-Crystal Si Seeds
MLA
Takashi Sakane, et al. “Single-Crystalline (100) Ge Stripes with High Mobilities Formed on Insulating Substrates by Rapid-Melting-Growth with Artificial Single-Crystal Si Seeds.” Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, Sept. 2010. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........ecf3e80f877cd322405573be874664dd&authtype=sso&custid=ns315887.
APA
Takashi Sakane, Masashi Kurosawa, Kiyoshi Toko, Masanobu Miyao, Taizoh Sadoh, & Hiroyuki Yokoyama. (2010). Single-Crystalline (100) Ge Stripes with High Mobilities Formed on Insulating Substrates by Rapid-Melting-Growth with Artificial Single-Crystal Si Seeds. Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Chicago
Takashi Sakane, Masashi Kurosawa, Kiyoshi Toko, Masanobu Miyao, Taizoh Sadoh, and Hiroyuki Yokoyama. 2010. “Single-Crystalline (100) Ge Stripes with High Mobilities Formed on Insulating Substrates by Rapid-Melting-Growth with Artificial Single-Crystal Si Seeds.” Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, September. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........ecf3e80f877cd322405573be874664dd&authtype=sso&custid=ns315887.