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Plasma‐assisted electroepitaxy as a novel method for the growth of GaN layers
- Source :
- physica status solidi c. 9:538-541
- Publication Year :
- 2012
- Publisher :
- Wiley, 2012.
-
Abstract
- In the current study we have demonstrated the feasibility of a novel approach for the growth of GaN layers, namely plasma-assisted electroepitaxy (PAEE). In this method, we have combined the advantages of the plasma process for producing high concentrations of active N species in the Ga melt with the advantages of electroepitaxy in transferring the N species from the Ga surface to the growth interface, without spontaneous crystallisation on the surface or within the solution. We have designed and built a new growth chamber which allows us to combine the plasma-assisted molecular beam epitaxy process with a liquid phase electroepitaxy system. We have demonstrated that it is possible to grow GaN layers by PAEE at growth temperatures as low as ∼650 oC and with low nitrogen overpressures of ∼3×10-5 Torr. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Details
- ISSN :
- 16101642 and 18626351
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- physica status solidi c
- Accession number :
- edsair.doi...........e842627c4b76d5792e35e9e7aaaa558b