Cite
Plasma‐assisted electroepitaxy as a novel method for the growth of GaN layers
MLA
Anthony J. Kent, et al. “Plasma‐assisted Electroepitaxy as a Novel Method for the Growth of GaN Layers.” Physica Status Solidi C, vol. 9, Feb. 2012, pp. 538–41. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........e842627c4b76d5792e35e9e7aaaa558b&authtype=sso&custid=ns315887.
APA
Anthony J. Kent, C. T. Foxon, R. E. L. Powell, A. V. Akimov, C.R. Staddon, & Sergei V. Novikov. (2012). Plasma‐assisted electroepitaxy as a novel method for the growth of GaN layers. Physica Status Solidi C, 9, 538–541.
Chicago
Anthony J. Kent, C. T. Foxon, R. E. L. Powell, A. V. Akimov, C.R. Staddon, and Sergei V. Novikov. 2012. “Plasma‐assisted Electroepitaxy as a Novel Method for the Growth of GaN Layers.” Physica Status Solidi C 9 (February): 538–41. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........e842627c4b76d5792e35e9e7aaaa558b&authtype=sso&custid=ns315887.