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Interface traps at Al 2 O 3 /InAlN/GaN MOS-HEMT -on- 200 mm Si
- Source :
- Solid-State Electronics. 137:117-122
- Publication Year :
- 2017
- Publisher :
- Elsevier BV, 2017.
-
Abstract
- We report on the characterization of the interfaces of Al2O3/InAlN/GaN HEMT structure grown on 200 mm diameter silicon using conductance dispersion technique. Irreversible threshold voltage (VTH) shift of up to +similar to 2.5 V was observed due to the gate stress induced activation of acceptor states. Further, frequency dependent VTH shift during capacitance voltage measurements were also recorded due to the presence of slow traps at InAlN/GaN interface. The conductance dispersion indicated the presence of acceptor traps of the order of similar to 4 x 10(12) to 7 x 10(13) cm(-2) eV(-1) with a time constant of similar to 10 to 350 ls at the InAlN/GaN interface. Trap density at the Al2O3/InAlN was found to be in similar range but with a time constant of similar to 2 ms. The presence of high density of traps at InAlN/GaN interface is attributed to the unavoidable growth interruption before the start of InAlN growth. (C) 2017 Elsevier Ltd. All rights reserved.
- Subjects :
- 010302 applied physics
Materials science
Silicon
business.industry
Time constant
Conductance
chemistry.chemical_element
02 engineering and technology
High-electron-mobility transistor
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Acceptor
Electronic, Optical and Magnetic Materials
Threshold voltage
chemistry
0103 physical sciences
Trap density
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
0210 nano-technology
business
Dispersion (chemistry)
Subjects
Details
- ISSN :
- 00381101
- Volume :
- 137
- Database :
- OpenAIRE
- Journal :
- Solid-State Electronics
- Accession number :
- edsair.doi...........d20ae43a078f0b88f70166e6088a17b8