Cite
Interface traps at Al 2 O 3 /InAlN/GaN MOS-HEMT -on- 200 mm Si
MLA
Sukant K. Tripathy, et al. “Interface Traps at Al 2 O 3 /InAlN/GaN MOS-HEMT -on- 200 Mm Si.” Solid-State Electronics, vol. 137, Nov. 2017, pp. 117–22. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........d20ae43a078f0b88f70166e6088a17b8&authtype=sso&custid=ns315887.
APA
Sukant K. Tripathy, Digbijoy N. Nath, Srinivasan Raghavan, Nayana Remesh, Surani Bin Dolmanan, Sandeep Kumar, & Rangarajan Muralidharan. (2017). Interface traps at Al 2 O 3 /InAlN/GaN MOS-HEMT -on- 200 mm Si. Solid-State Electronics, 137, 117–122.
Chicago
Sukant K. Tripathy, Digbijoy N. Nath, Srinivasan Raghavan, Nayana Remesh, Surani Bin Dolmanan, Sandeep Kumar, and Rangarajan Muralidharan. 2017. “Interface Traps at Al 2 O 3 /InAlN/GaN MOS-HEMT -on- 200 Mm Si.” Solid-State Electronics 137 (November): 117–22. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........d20ae43a078f0b88f70166e6088a17b8&authtype=sso&custid=ns315887.