Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy

The molecular beam epitaxy growth of strained (Ga, In)Sb/GaSb quantum wells is investigated. In a narrow range of growth conditions, (Ga, In)Sb quantum well structures exhibiting excellent structural properties as well as intense and narrow photoluminescence transitions are obtained. Stimulated emission at 1.98 m is observed at room temperature from laser diodes with strained quantum wells as the active zone. The lasers exhibit threshold current densities as low as 280 A and a characteristic temperature of 75 K.