Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy

MLA

Guilhem Almuneau, et al. “Long-Wavelength (Ga, In)Sb/GaSb Strained Quantum Well Lasers Grown by Molecular Beam Epitaxy.” Semiconductor Science and Technology, vol. 13, Aug. 1998, pp. 936–40. EBSCOhost, https://doi.org/10.1088/0268-1242/13/8/019.

APA

Guilhem Almuneau, Alexei N. Baranov, Nicolas Bertru, Oliver Brandt, André Joullié, Yvan Cuminal, Frédéric Genty, A. Mazuelas, & K. H. Ploog. (1998). Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy. Semiconductor Science and Technology, 13, 936–940. https://doi.org/10.1088/0268-1242/13/8/019

Chicago

Guilhem Almuneau, Alexei N. Baranov, Nicolas Bertru, Oliver Brandt, André Joullié, Yvan Cuminal, Frédéric Genty, A. Mazuelas, and K. H. Ploog. 1998. “Long-Wavelength (Ga, In)Sb/GaSb Strained Quantum Well Lasers Grown by Molecular Beam Epitaxy.” Semiconductor Science and Technology 13 (August): 936–40. doi:10.1088/0268-1242/13/8/019.