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Plasma Nitridation Technique for the Formation of Thermally Stable Hf-silicate Gate Dielectric with Controlled Nitrogen Profile
- Source :
- Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials.
- Publication Year :
- 2002
- Publisher :
- The Japan Society of Applied Physics, 2002.
Details
- Database :
- OpenAIRE
- Journal :
- Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials
- Accession number :
- edsair.doi...........b5c7857b7407932a4054b79f98ad17c5
- Full Text :
- https://doi.org/10.7567/ssdm.2002.lb-1-2