Plasma Nitridation Technique for the Formation of Thermally Stable Hf-silicate Gate Dielectric with Controlled Nitrogen Profile

MLA

Kazuhiro Eguchi, et al. “Plasma Nitridation Technique for the Formation of Thermally Stable Hf-Silicate Gate Dielectric with Controlled Nitrogen Profile.” Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, Jan. 2002. EBSCOhost, https://doi.org/10.7567/ssdm.2002.lb-1-2.

APA

Kazuhiro Eguchi, Akira Nishiyama, Yoshiki Kamata, Chie Hongo, Dawei Gao, Akio Kaneko, Akira Takashima, Yuichi Kamimuta, Mizuki Ono, Mariko Takayanagi, Masato Koyama, & Seiji Inumiya. (2002). Plasma Nitridation Technique for the Formation of Thermally Stable Hf-silicate Gate Dielectric with Controlled Nitrogen Profile. Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials. https://doi.org/10.7567/ssdm.2002.lb-1-2

Chicago

Kazuhiro Eguchi, Akira Nishiyama, Yoshiki Kamata, Chie Hongo, Dawei Gao, Akio Kaneko, Akira Takashima, et al. 2002. “Plasma Nitridation Technique for the Formation of Thermally Stable Hf-Silicate Gate Dielectric with Controlled Nitrogen Profile.” Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, January. doi:10.7567/ssdm.2002.lb-1-2.