ELECTROCHEMICAL EFFECTS DURING ANISOTROPIC BULK-SILICON ETCHING WITH DOPED AND UNDOPED TMAHw SOLUTIONS

Authors :: V. Guarnieri
Benno Margesin
Pl. Bellutti
Mario Zen
A. Faes
S. Brida
Flavio Giacomozzi
Source :: Sensors and Microsystems.
Publication Year :: 2001
Publisher :: WORLD SCIENTIFIC, 2001.

Subjects :: Materials science
business.industry
Doping
Optoelectronics
Electrochemistry
business
Anisotropy
Silicon etching

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