ELECTROCHEMICAL EFFECTS DURING ANISOTROPIC BULK-SILICON ETCHING WITH DOPED AND UNDOPED TMAHw SOLUTIONS

MLA

V. Guarnieri, et al. “ELECTROCHEMICAL EFFECTS DURING ANISOTROPIC BULK-SILICON ETCHING WITH DOPED AND UNDOPED TMAHw SOLUTIONS.” Sensors and Microsystems, Dec. 2001. EBSCOhost, https://doi.org/10.1142/9789812810779_0044.

APA

V. Guarnieri, Benno Margesin, Pl. Bellutti, Mario Zen, A. Faes, S. Brida, & Flavio Giacomozzi. (2001). ELECTROCHEMICAL EFFECTS DURING ANISOTROPIC BULK-SILICON ETCHING WITH DOPED AND UNDOPED TMAHw SOLUTIONS. Sensors and Microsystems. https://doi.org/10.1142/9789812810779_0044

Chicago

V. Guarnieri, Benno Margesin, Pl. Bellutti, Mario Zen, A. Faes, S. Brida, and Flavio Giacomozzi. 2001. “ELECTROCHEMICAL EFFECTS DURING ANISOTROPIC BULK-SILICON ETCHING WITH DOPED AND UNDOPED TMAHw SOLUTIONS.” Sensors and Microsystems, December. doi:10.1142/9789812810779_0044.