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Wet releasing and stripping SU-8 structures with a nanoscale sacrificial layer

Authors :
Katsuhiko Tanaka
Xuhan Dai
Susumu Sugiyama
Xiaolin Zhao
Peihong Wang
Source :
Microelectronic Engineering. 86:2232-2235
Publication Year :
2009
Publisher :
Elsevier BV, 2009.

Abstract

This paper presents a new method of wet releasing SU-8 structures using very thin Omnicoat^(TM) as sacrificial layer and NMD-3 developer as releasing solution. Four-inch sized SU-8 structures with different pattern and thickness of [email protected] have been successfully released from silicon substrate by this method. Experiments show that Omnicoat^(TM) layer is very helpful to strip SU-8 molds in which metal structures are electroplated. SU-8 can be removed directly using remover if there is an Omnicoat^(TM) layer between the substrate and SU-8 and the electroplated structures is with large dimension. In the case of electroplated structures with small feature size, SU-8 can be removed by combining wet stripping and plasma etching. Nickel micro coils with linewidth of [email protected] and aspect ratio of 4.1 have been fabricated. The analysis about the influence of Omnicoat^(TM) layer's thickness on integrity of SU-8 micro coils is also given in our work.

Details

ISSN :
01679317
Volume :
86
Database :
OpenAIRE
Journal :
Microelectronic Engineering
Accession number :
edsair.doi...........a7e4dab316e3cb848e76fa2536a43a17